Features: RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 60 V ID Continuous...
WFP50N06: Features: RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications S...
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Symbol |
Parameter |
Value |
Units | |
VDSS |
Drain to Source Voltage |
60 |
V | |
ID |
Continuous Drain Current(@TC = 25°C) |
50 |
A | |
Continuous Drain Current(@TC = 100°C) |
35 |
A | ||
IDM |
Drain Current Pulsed | (Note 1) |
200 |
A |
VGS |
Gate to Source Voltage |
±20 |
V | |
EAS |
Single Pulsed Avalanche Energy | (Note 2) |
493 |
mJ |
EAR |
Repetitive Avalanche Energy | (Note 1) |
12.0 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt | (Note 3) |
7.0 |
V/ns |
PD |
Total Power Dissipation(@TC = 25 °C) |
120 |
W | |
Derating Factor above 25 °C |
0.8 |
W/°C | ||
TSTG, TJ |
Operating Junction Temperature & Storage Temperature |
- 55 ~ 175 |
°C | |
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C |
This Power MOSFET of the WFP50N06 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.