WFP50N06

Features: RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 60 V ID Continuous...

product image

WFP50N06 Picture
SeekIC No. : 004545670 Detail

WFP50N06: Features: RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C)Specifications S...

floor Price/Ceiling Price

Part Number:
WFP50N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

RDS(on) (Max 0.022 )@VGS=10V
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)



Specifications

Symbol
Parameter
Value
Units
VDSS
Drain to Source Voltage
60
V
ID
Continuous Drain Current(@TC = 25°C)
50
A
Continuous Drain Current(@TC = 100°C)
35
A
IDM
Drain Current Pulsed (Note 1)
200
A
VGS
Gate to Source Voltage
±20
V
EAS
Single Pulsed Avalanche Energy (Note 2)
493
mJ
EAR
Repetitive Avalanche Energy (Note 1)
12.0
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
7.0
V/ns
PD
Total Power Dissipation(@TC = 25 °C)
120
W
Derating Factor above 25 °C
0.8
W/°C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
- 55 ~ 175
°C
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C



Description

This Power MOSFET of the WFP50N06 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Power Supplies - Board Mount
LED Products
Industrial Controls, Meters
Soldering, Desoldering, Rework Products
Tapes, Adhesives
803
View more