WFP4620D, WFP4N60, WFP50N06 Selling Leads, Datasheet
MFG:WINBOND Package Cooled:QFP D/C:00+
WFP4620D, WFP4N60, WFP50N06 Datasheet download
Part Number: WFP4620D
MFG: WINBOND
Package Cooled: QFP
D/C: 00+
WFP4620D, WFP4N60, WFP50N06
- Table of contents:
Info of WFP4620D
Info of WFP4N60
Info of WFP50N06
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About WFP50N06
PDF/DataSheet Download
Datasheet: WFP50N06
File Size: 789680 KB
Manufacturer:
Download : Click here to Download
About WFP50N06
PDF/DataSheet Download
Datasheet: WFP50N06
File Size: 789680 KB
Manufacturer:
Download : Click here to Download
About WFP50N06
PDF/DataSheet Download
Datasheet: WFP50N06
File Size: 789680 KB
Manufacturer:
Download : Click here to Download
WFP4N60 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power facto correction, electronic lamp ballasts based on half bridge topology.
WFP4N60 Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 600 | V |
| ID | Continuous Drain Current(@TC = 25) | 4.0 | A |
| Continuous Drain Current(@TC = 100) | 2.5 | A | |
| IDM | Drain Current Pulsed (Note 1) | 16 | A |
| VGS | Gate to Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 240 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 10 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 4.5 | V/ns |
| PD | Total Power Dissipation(@TC = 25 ) | 100 | W |
| Derating Factor above 25 | 0.8 | W/ | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
WFP4N60 Features
RDS(on) (Max 2.5 )@VGS=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)
WFP50N06 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
WFP50N06 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units | |
|
VDSS |
Drain to Source Voltage |
60 |
V | |
|
ID |
Continuous Drain Current(@TC = 25°C) |
50 |
A | |
| Continuous Drain Current(@TC = 100°C) |
35 |
A | ||
|
IDM |
Drain Current Pulsed | (Note 1) |
200 |
A |
|
VGS |
Gate to Source Voltage |
±20 |
V | |
|
EAS |
Single Pulsed Avalanche Energy | (Note 2) |
493 |
mJ |
|
EAR |
Repetitive Avalanche Energy | (Note 1) |
12.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt | (Note 3) |
7.0 |
V/ns |
|
PD |
Total Power Dissipation(@TC = 25 °C) |
120 |
W | |
| Derating Factor above 25 °C |
0.8 |
W/°C | ||
|
TSTG, TJ |
Operating Junction Temperature & Storage Temperature |
- 55 ~ 175 |
°C | |
|
TL |
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
°C | |
WFP50N06 Features
RDS(on) (Max 0.022 )@VGS=10V
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
Gate Charge (Typical 32nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175°C)
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