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WFP4N60

Features: RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Continuous Drain Current(@T...

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WFP4N60: Features: RDS(on) (Max 2.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150)Specifications Symbol ...

WFP4N60 Data Sheet

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Part Number:
WFP4N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

RDS(on) (Max 2.5 )@VGS=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25) 4.0 A
Continuous Drain Current(@TC = 100) 2.5 A
IDM Drain Current Pulsed                    (Note 1) 16 A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy  (Note 2) 240 mJ
EAR Repetitive Avalanche Energy       (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt       (Note 3) 4.5 V/ns
PD Total Power Dissipation(@TC = 25 ) 100 W
Derating Factor above 25 0.8 W/
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300



Description

This Power MOSFET of the WFP4N60 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power facto  correction, electronic lamp ballasts based on half bridge topology.




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