MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:SOT-223 D/C:06+
VNN7NV0413TR, VNN7NV04S13TR, VNP10N06 Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: SOT-223
D/C: 06+
Description: MOSFET N-CH 60V 10A TO-220
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Datasheet: VNN7NV0413TR
File Size: 500504 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: VNN1NV04
File Size: 402055 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: VNP10N06
File Size: 129924 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | VNN7NV0413TR |
| Vendor | STMicroelectronics (VA) |
| Category | Integrated Circuits (ICs) |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 60 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 9A |
| Packaging | Digi-Reel? |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VNN7NV0413TR VNN7NV0413TR 497 2519 6 ND 49725196ND 497-2519-6 |
| Technical/Catalog Information | VNP10N06 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-3 (Straight Leads) |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 150 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNP10N06 VNP10N06 497 3310 5 ND 49733105ND 497-3310-5 |
The VNP10N06 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
| Symbol | Parameter | Value | Unit | |
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |
|
VIN |
Input Voltage |
Internally Clamped | V | |
|
Iin |
Input Current |
±20 |
mA | |
|
ID |
Drain Current |
Internally Clamped | A | |
| IR |
Reverse DC Output Current |
-15 | A | |
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
4000 | V | |
|
Ptot |
Total Dissipation at TC=25°C | 42 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||
| TC |
Case operating temperature |
Internally Limited | ||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |
During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH.
The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.
During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.
In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V.The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage.
When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
If Tj reaches Tjsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to Tjrs
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