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VNP28N04, VNP28N04FI, VNP35N04

VNP28N04, VNP28N04FI, VNP35N04 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Integrated Circuits (ICs)  Package Cooled:TO 220 AB NON ISOL  D/C:32500

VNP28N04 Picture

VNP28N04, VNP28N04FI, VNP35N04 Datasheet download

Five Points

Part Number: VNP28N04

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: TO 220 AB NON ISOL

D/C: 32500

Description: MOSFET POWER 42V 28A ISOWATT220

 

 
 
 
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  • VNP10BX

  • Vendor: ST Pack: TO D/C: 06+& Qty: 1000 Note: 2C006  Adddate: 2024-12-26
  • Inquire Now
  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)

About VNP28N04

PDF/DataSheet Download

Datasheet: VNP28N04

File Size: 136728 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • VNP10BX

  • Vendor: ST Pack: TO D/C: 06+& Qty: 1000 Note: 2C006  Adddate: 2024-12-26
  • Inquire Now
  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)
  • VNP35N07

  • Vendor: ST Pack: SOP D/C: 06+& Qty: 10000 Note: 2C006  Adddate: 2024-12-26
  • Inquire Now
  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)

About VNP28N04FI

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Datasheet: VNP28N04FI

File Size: 141902 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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VNP35N04 Suppliers

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  • VNP10BX

  • Vendor: ST Pack: TO D/C: 06+& Qty: 1000 Note: 2C006  Adddate: 2024-12-26
  • Inquire Now
  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)
  • VNP35N07

  • Vendor: ST Pack: SOP D/C: 06+& Qty: 10000 Note: 2C006  Adddate: 2024-12-26
  • Inquire Now
  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)

About VNP10N06

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Datasheet: VNP10N06

File Size: 129924 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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VNP28N04 Parameters

Technical/Catalog InformationVNP28N04
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CaseTO-220-3 (Straight Leads)
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply-
On-State Resistance35 mOhm
Current - Output / Channel-
Current - Peak Output28A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names VNP28N04
VNP28N04
497 2667 5 ND
49726675ND
497-2667-5

VNP28N04 General Description

The VNP28N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNP28N04 Maximum Ratings

Symbol Parameter Value Unit
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped V

VIN

Input Voltage

18 V

ID

Drain Current

Internally Clamped A
IR

Reverse DC Output Current

-28 A
Vesd

Electrostatic discharge(C= 100 pF, R=1.5 K)

2000 V

Ptot

Total Dissipation at TC=25°C 83

W

Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

VNP28N04 Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).

VNP28N04FI Parameters

Technical/Catalog InformationVNP28N04FI
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CaseISOWATT-220-3
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply-
On-State Resistance35 mOhm
Current - Output / Channel-
Current - Peak Output28A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNP28N04FI
VNP28N04FI

VNP28N04FI General Description

The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNP28N04FI Maximum Ratings

Symbol Parameter Value Unit
PowerSO-10
D2PAK
ISOWATT220
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped V

VIN

Input Voltage

18 V

ID

Drain Current

Internally Clamped A
IR

Reverse DC Output Current

-28 A
Vesd

Electrostatic discharge(C= 100 pF, R=1.5 K)

2000 V

Ptot

Total Dissipation at TC=25°C 83 34

W

Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

VNP28N04FI Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).

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