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The VNP28N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNP28N04 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
VIN
Input Voltage
18
V
ID
Drain Current
Internally Clamped
A
IR
Reverse DC Output Current
-28
A
Vesd
Electrostatic discharge(C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at TC=25°C
83
W
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VNP28N04 Features
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates: - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
VNP28N04FI Parameters
Technical/Catalog Information
VNP28N04FI
Vendor
STMicroelectronics
Category
Integrated Circuits (ICs)
Package / Case
ISOWATT-220-3
Mounting Type
Through Hole
Type
Low Side
Voltage - Supply
-
On-State Resistance
35 mOhm
Current - Output / Channel
-
Current - Peak Output
28A
Packaging
Tube
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
VNP28N04FI VNP28N04FI
VNP28N04FI General Description
The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNP28N04FI Maximum Ratings
Symbol
Parameter
Value
Unit
PowerSO-10 D2PAK
ISOWATT220
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
VIN
Input Voltage
18
V
ID
Drain Current
Internally Clamped
A
IR
Reverse DC Output Current
-28
A
Vesd
Electrostatic discharge(C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at TC=25°C
83
34
W
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VNP28N04FI Features
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates: - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).