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VNP5N07, VNP5N07FI, VNP7N04

Table of contents:
Info of VNP5N07
Info of VNP5N07FI
Info of VNP7N04

VNP5N07, VNP5N07FI, VNP7N04 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:TO-3P D/C:07+

VNP5N07, VNP5N07FI, VNP7N04 Datasheet download

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Part Number: VNP5N07

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: TO-3P

D/C: 07+

Description: MOSFET POWER 42V 7A TO-220AB

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VNP5N07 Parameters

Technical/Catalog Information	VNP5N07
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	TO-220-3 (Straight Leads)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	200 mOhm
Current - Output / Channel	-
Current - Peak Output	5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Lead Free Status	Contains Lead
RoHS Status	Request Inventory Verification
Other Names	VNP5N07 VNP5N07 497 2791 5 ND 49727915ND 497-2791-5

VNP5N07 General Description

The VNP5N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNP5N07 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (Vin = 0)	Internally Clamped	V
V_IN	Input Voltage	18	V
I_D	Drain Current	Internally Clamped	A
I_R	Reverse DC Output Current	-7	A
V_esd	Electrostatic discharge(C= 100 pF, R=1.5 K)	2000	V
P_tot	Total Dissipation at T_C=25°C	31	W
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VNP5N07 Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (I_iss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R_DS(on)).

VNP5N07FI Parameters

Technical/Catalog Information	VNP5N07FI
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	ISOWATT-220-3
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	200 mOhm
Current - Output / Channel	-
Current - Peak Output	5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	VNP5N07FI VNP5N07FI 497 3313 5 ND 49733135ND 497-3313-5

VNP5N07FI General Description

The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNP5N07FI Maximum Ratings

Symbol	Parameter	Value			Unit
		DPAK IPAK	ISOWATT220	SOT-82FM
V_DS	Drain-source Voltage (Vin = 0)	Internally Clamped			V
V_IN	Input Voltage	18			V
I_D	Drain Current	Internally Clamped			A
I_R	Reverse DC Output Current	-7			A
V_esd	Electrostatic discharge(C= 100 pF, R=1.5 K)	2000			V
P_tot	Total Dissipation at T_C=25°C	60	24	9	W
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VNP5N07FI Features

LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER MOSFET

VNP7N04 Parameters

Technical/Catalog Information	VNP7N04
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	TO-220-3 (Straight Leads)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	140 mOhm
Current - Output / Channel	-
Current - Peak Output	7A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VNP7N04 VNP7N04

VNP7N04 General Description

The VNP7N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNP7N04 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (Vin = 0)	Internally Clamped	V
V_IN	Input Voltage	18	V
I_D	Drain Current	Internally Clamped	A
I_R	Reverse DC Output Current	-7	A
V_esd	Electrostatic discharge(C= 100 pF, R=1.5 K)	2000	V
P_tot	Total Dissipation at T_C=25°C	31	W
T_j	Operating Junction Temperature	Internally Limited
T_C	Case operating temperature	Internally Limited
T_stg	Storage Temperature	-55 to 150

VNP7N04 Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (I_iss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R_DS(on)).

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