MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:6000 D/C:08+/09+
VNP10N06FI, VNP10N07, VNP10N07FI Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: 6000
D/C: 08+/09+
Description: MOSFET N-CH 70V 10A ISOWATT-220
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Datasheet: VNP10N06FI
File Size: 172331 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: VNP10N07
File Size: 137397 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNP10N07FI
File Size: 162915 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | VNP10N06FI |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220FP |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 150 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | VNP10N06FI VNP10N06FI |
The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
| Symbol | Parameter | Value | Unit | |||
| DPAK IPAK |
ISOWATT220 | SOT82-FM | ||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
Internally Clamped | V | |||
|
Iin |
Input Current |
±20 |
mA | |||
|
ID |
Drain Current |
Internally Clamped | A | |||
| IR |
Reverse DC Output Current |
-15 | A | |||
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
4000 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 35 | 27 | 9 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH.
The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.
During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.
In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V. The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUTpin Voltage.
When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
If Tj reaches Tjsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to Tjrs
| Technical/Catalog Information | VNP10N07 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-3 (Straight Leads) |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 100 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNP10N07 VNP10N07 497 2795 5 ND 49727955ND 497-2795-5 |
The VNP10N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |
|
VIN |
Input Voltage |
18 | V | |
|
ID |
Drain Current |
Internally Clamped | A | |
| IR |
Reverse DC Output Current |
-14 | A | |
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
2000 | V | |
|
Ptot |
Total Dissipation at TC=25°C | 50 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||
| TC |
Case operating temperature |
Internally Limited | ||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 .The failure can be detected by monitoring the
voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
| Technical/Catalog Information | VNP10N07FI |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | ISOWATT-220-3 |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 100 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNP10N07FI VNP10N07FI 497 2796 5 ND 49727965ND 497-2796-5 |
The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |||
| PowerSO-10 D2PAK |
SOT-82FM | ISOWATT220 | ||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
18 | V | |||
|
ID |
Drain Current |
Internally Limited | A | |||
| IR |
Reverse DC Output Current |
-14 | A | |||
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
2000 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 50 | 9.5 | 31 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
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