MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:TO 220 AB NON ISOL D/C:03
VNP35NV04, VNP49N04, VNP49N04FI Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics
Package Cooled: TO 220 AB NON ISOL
D/C: 03
Description: MOSFET N-CH 42V 49A ISOWATT-220
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Datasheet: VNP35NV04
File Size: 422059 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: VNP49N04
File Size: 135017 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNP49N04FI
File Size: 136237 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | VNP35NV04 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-3 (Straight Leads) |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 13 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 45A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNP35NV04 VNP35NV04 497 3311 5 ND 49733115ND 497-3311-5 |
The VNB35NV04, VNP35NV04, VNV35NV04,VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology,intended for replacement of standard Power MOSFETS from DC up to 25KHz applications.Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | ||||
| PowerSO-10™ | D2PAK | TO-220 | TO-247 | ||||
| VDS |
Drain-source Voltage (VIN = 0) |
Internally Clamped | V | ||||
|
VIN |
Input Voltage |
Internally Clamped | V | ||||
| IIN |
Input Current |
+/-20 | mA | ||||
|
RIN MIN |
Minimum Input Series Impedance |
4.7 | |||||
|
ID |
Drain Current |
Internally Clamped | A | ||||
| IR |
Reverse DC Output Current |
-30 | A | ||||
| VESD1 |
Electrostatic discharge(R=1.5 K,C= 100 pF) |
4000 | V | ||||
|
VESD2 |
Electrostatic Discharge on output pin only R=330, C=150pF) |
16500 | V | ||||
|
Ptot |
Total Dissipation at TC=25°C | 125 | 125 | 125 | 208 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | |||||
| TC |
Case operating temperature |
Internally Limited | |||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| ||||
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 25KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to Ilim whatever the INPUT pin voltages is. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation:no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.
| Technical/Catalog Information | VNP49N04 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220-3 (Straight Leads) |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 20 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 49A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNP49N04 VNP49N04 497 2649 5 ND 49726495ND 497-2649-5 |
The VNP49N04 is a monolithic device madeusing SGS-THOMSON Vertical Intelligent PowerM0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |
|
VIN |
Input Voltage |
18 | V | |
|
ID |
Drain Current |
Internally Clamped | A | |
| IR |
Reverse DC Output Current |
-50 | A | |
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
2000 | V | |
|
Ptot |
Total Dissipation at TC=25°C | 125 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||
| TC |
Case operating temperature |
Internally Limited | ||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 .The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
| Technical/Catalog Information | VNP49N04FI |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Package / Case | ISOWATT-220-3 |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 40 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 49A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | VNP49N04FI VNP49N04FI 497 3312 5 ND 49733125ND 497-3312-5 |
The VNP49N04FI, VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics VIPower M0 Technology,intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |||
| PowerSO-10TM | D2PAK | ISOWATT220 | ||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
18 | V | |||
|
ID |
Drain Current |
Internally Limited | A | |||
| IR |
Reverse DC Output Current |
-50 | A | |||
| Vesd |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
2000 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 125 | 125 | 40 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current (IISS) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to ILIM whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150°C. The device is automatically restarted when the chip temperature falls below 135°C.
- STATUS FEEDBACK:in the case of an overtemperature fault condition, a status feedback is provided through the INPUT pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100W. The failure can be detected by monitoring the voltage at the INPUT pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(ON)).
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