VNP10N06

Transistor Polarity :
Continuous Drain Current :
Configuration :
Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.15 Ohms


Features:

During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as V_IN > V_IH.

The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current (typically 150 mA) flows into the INPUT pin in order to supply the internal circuitry.

During turn-off of an unclamped inductive load the output voltage is clamped to a safe level by an integrated Zener clamp between DRAIN pin and the gate of the internal Power MOSFET.

In this condition, the Power MOSFET gate is set to a voltage high enough to sustain the inductive load current even if the INPUT pin is driven to 0V.The device integrates an active current limiter circuit which limits the drain current ID to Ilim whatever the INPUT pin Voltage.

When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the heatsinking capability. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T_jsh.

If T_j reaches T_jsh, the device shuts down whatever the INPUT pin voltage. The device will restart automatically when Tj has cooled down to T_jrs

Specifications

Symbol		Parameter	Value	Unit
VDS		Drain-source Voltage (Vin = 0)	Internally Clamped	V
VIN		Input Voltage	Internally Clamped	V
Iin		Input Current	±20	mA
ID		Drain Current	Internally Clamped	A
IR		Reverse DC Output Current	-15	A
Vesd		Electrostatic discharge(C= 100 pF, R=1.5 K)	4000	V
Ptot		Total Dissipation at TC=25°C	42	W
Tj		Operating Junction Temperature	Internally Limited
TC		Case operating temperature	Internally Limited
Tstg		Storage Temperature	-55 to 150

Description

The VNP10N06 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Parameters:

Technical/Catalog Information	VNP10N06
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	TO-220-3 (Straight Leads)
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	150 mOhm
Current - Output / Channel	-
Current - Peak Output	10A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	VNP10N06 VNP10N06 497 3310 5 ND 49733105ND 497-3310-5