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The VNP14N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNP14N04 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
VIN
Input Voltage
18
V
ID
Drain Current
Internally Clamped
A
IR
Reverse DC Output Current
-14
A
Vesd
Electrostatic discharge(C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at TC=25°C
50
W
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VNP14N04 Features
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates: - OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
VNP14N04FI Parameters
Technical/Catalog Information
VNP14N04FI
Vendor
STMicroelectronics
Category
Integrated Circuits (ICs)
Package / Case
ISOWATT-220-3
Mounting Type
Through Hole
Type
Low Side
Voltage - Supply
-
On-State Resistance
70 mOhm
Current - Output / Channel
-
Current - Peak Output
14A
Packaging
Tube
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
VNP14N04FI VNP14N04FI
VNP14N04FI General Description
The VNB14N04, VNK14N04FM, VNP14N04FI and VNV14N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNP14N04FI Maximum Ratings
Symbol
Parameter
Value
Unit
PowerSO-10 D2PAK
SOT-82FM
ISOWATT220
VDS
Drain-source Voltage (Vin = 0)
Internally Clamped
V
VIN
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-14
A
Vesd
Electrostatic discharge(C= 100 pF, R=1.5 K)
2000
V
Ptot
Total Dissipation at TC=25°C
50
9.5
31
W
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VNP14N04FI Features
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
The device integrates:- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalle ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.
- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)).
VNP14NV04 Parameters
Technical/Catalog Information
VNP14NV04
Vendor
STMicroelectronics
Category
Integrated Circuits (ICs)
Package / Case
TO-220-3 (Straight Leads)
Mounting Type
Through Hole
Type
Low Side
Voltage - Supply
-
On-State Resistance
35 mOhm
Current - Output / Channel
-
Current - Peak Output
18A
Packaging
Tube
Input Type
Non-Inverting
Number of Outputs
1
Operating Temperature
-
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
VNP14NV04 VNP14NV04
VNP14NV04 General Description
The VNB14NV04, VND14NV04, VND14NV04-1,VNP14NV04, VNS14NV04, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation |and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
VNP14NV04 Maximum Ratings
Symbol
Parameter
Value
Unit
SO-8
DPAK
TO-220
IPAK
D2PAK
VDS
Drain-source Voltage (VIN = 0)
Internally Clamped
V
VIN
Input Voltage
Internally Clamped
V
IIN
Input Current
+/-20
mA
RINMIN
Minimum Input Series Impedance
10
ID
Drain Current
Internally Clamped
A
IR
Reverse DC Output Current
-15
A
VESD1
Electrostatic discharge(R=1.5 K,C= 100 pF)
4000
V
VESD2
Electrostatic Discharge on output pin only R=330, C=150pF)
16500
V
Ptot
Total Dissipation at TC=25°C
4.6
74
74
74
74
W
EMAX
Maximum Switching Energy (L=0.4mH; RL=0; Vbat=13.5V; Tjstart=150ºC; IL=18A)
93
93
mJ
Tj
Operating Junction Temperature
Internally Limited
TC
Case operating temperature
Internally Limited
Tstg
Storage Temperature
-55 to 150
VNP14NV04 Features
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates: - OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15 C below shut-down temperature.
- STATUS FEEDBACK:in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation:no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.