MFG:STMicroelectronics (VA) Category:Integrated Circuits (ICs) Package Cooled:ST D/C:2004
VNN3NV04, VNN3NV0413TR, VNN7NV04 Datasheet download
Category: Integrated Circuits (ICs)
MFG: STMicroelectronics (VA)
Package Cooled: ST
D/C: 2004
Description: MOSFET N-CH 40V 3.5A SOT223
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Datasheet: VNN3NV04
File Size: 428635 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNN1NV04
File Size: 402055 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: VNN7NV04
File Size: 500504 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology,intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |||
| SOT-223 | SO-8 | DPAK/IPAK | ||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
Internally Clamped | V | |||
| IIN |
Input Current |
+/-20 | mA | |||
|
RIN MIN |
Minimum Input Series Impedance |
220 | ||||
|
ID |
Drain Current |
Internally Clamped | A | |||
| IR |
Reverse DC Output Current |
-5.5 | A | |||
| VESD1 |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
4000 | V | |||
|
VESD2 |
Electrostatic Discharge on output pin only R=330, C=150pF) |
16500 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 7 | 8.3 | 35 |
W | |
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.
- STATUS FEEDBACK:in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation:no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.
| Technical/Catalog Information | VNN3NV0413TR |
| Vendor | STMicroelectronics (VA) |
| Category | Integrated Circuits (ICs) |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | - |
| On-State Resistance | 120 mOhm |
| Current - Output / Channel | - |
| Current - Peak Output | 5A |
| Packaging | Digi-Reel? |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | - |
| Lead Free Status | Request Inventory Verification |
| RoHS Status | Request Inventory Verification |
| Other Names | VNN3NV0413TR VNN3NV0413TR 497 3309 6 ND 49733096ND 497-3309-6 |
The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology,intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
| Symbol | Parameter | Value | Unit | |||
| SOT-223 | ISO-8 | DPAK/IPAK | ||||
| VDS |
Drain-source Voltage (Vin = 0) |
Internally Clamped | V | |||
|
VIN |
Input Voltage |
Internally Clamped | V | |||
| IIN |
Input Current |
+/-20 | mA | |||
|
RIN MIN |
Minimum Input Series Impedance |
150 | ||||
|
ID |
Drain Current |
Internally Clamped | A | |||
| IR |
Reverse DC Output Current |
-10.5 | A | |||
| VESD1 |
Electrostatic discharge(C= 100 pF, R=1.5 K) |
4000 | V | |||
|
VESD2 |
Electrostatic Discharge on output pin only R=330, C=150pF) |
16500 | V | |||
|
Ptot |
Total Dissipation at TC=25°C | 7 | 4.6 | 60 |
W | |
|
EMAX |
Maximum Switching Energy (L=0.7mH; RL=0; Vbat=13.5V; Tjstart=150ºC; IL=9A) |
40 | 40 | mJ | ||
|
EMAX |
Maximum Switching Energy (L=0.6mH; RL=0; Vbat=13.5V; Tjstart=150ºC; IL=9A) |
37 | mJ | |||
| Tj |
Operating Junction Temperature |
Internally Limited | ||||
| TC |
Case operating temperature |
Internally Limited | ||||
|
Tstg |
Storage Temperature |
-55 to 150 |
| |||
During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ 100mA) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current ID to Ilim whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast,accurate detection of the junction temperature.Overtemperature cut-out occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15°C below shut-down temperature.
- STATUS FEEDBACK: in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.
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