STU10NC70ZI, STU11NB60, STU11NC60 Selling Leads, Datasheet
MFG:ST Package Cooled:09+ D/C:TO
STU10NC70ZI, STU11NB60, STU11NC60 Datasheet download
Part Number: STU10NC70ZI
MFG: ST
Package Cooled: 09+
D/C: TO
MFG:ST Package Cooled:09+ D/C:TO
STU10NC70ZI, STU11NB60, STU11NC60 Datasheet download
MFG: ST
Package Cooled: 09+
D/C: TO
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Datasheet: STU10NC70ZI
File Size: 419219 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STU11NB60
File Size: 47115 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STU11NC60
File Size: 87852 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT
Symbol
|
Parameter | Value | Unit | |
STU10NC70Z | STU10NC70ZI | |||
VDS |
Drain-source Voltage (VGS = 0) |
700 |
V | |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
700 |
V | |
VGS |
Gate-Source Voltage |
±25 |
V | |
ID |
Drain Current (continuous) at Tc = 25 |
904 | 9.4(*) |
A |
ID |
Drain Current (continuous) at Tc = 100 |
5.9 | 5.9(*) |
A |
IDM(1) |
Drain Current (pulsed) |
37.6 |
37.6(*) |
A |
PTOT |
Total Dissipation at Tc = 25 |
160 |
55 |
W |
Derating Factor |
1.28 |
0.44 |
W/ | |
IGS |
Gate-source Current |
±50 |
mA | |
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=15K) |
4 |
KV | |
dv/dt(`) |
Peak Diode Recovery voltage slope |
3 |
V/ns | |
VISO | Insulation Winthstand Voltage (DC) | -- | 2000 | V |
Tstg |
Storage Temperature |
-65 to 150 |
||
Tj |
Max. Operating Junction Temperature |
150 |