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STU10NC70ZI, STU11NB60, STU11NC60

STU10NC70ZI, STU11NB60, STU11NC60 Selling Leads, Datasheet

MFG:ST  Package Cooled:09+  D/C:TO

STU10NC70ZI, STU11NB60, STU11NC60 Picture

STU10NC70ZI, STU11NB60, STU11NC60 Datasheet download

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Part Number: STU10NC70ZI

 

MFG: ST

Package Cooled: 09+

D/C: TO

 

 

 
 
 
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About STU10NC70ZI

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Datasheet: STU10NC70ZI

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Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About STU11NB60

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Datasheet: STU11NB60

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About STU11NC60

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Datasheet: STU11NC60

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STU10NC70ZI General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

STU10NC70ZI Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STU10NC70ZI Typical Application

·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT

STU10NC70ZI Connection Diagram

Symbol
Parameter                      Value          Unit
    STU10NC70Z STU10NC70ZI
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain- gate Voltage (RGS = 20 k)
700
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current (continuous) at Tc = 25
904 9.4(*)
A
ID

Drain Current (continuous) at Tc = 100
5.9 5.9(*)
A
IDM(1)
Drain Current (pulsed)
37.6
37.6(*)
A
PTOT
Total Dissipation at Tc = 25
160
55
W
                                
Derating Factor
      
1.28
       0.44  
W/
IGS
                        
Gate-source Current
     
±50
 
mA
VESD(G-S)
          
Gate source ESD(HBM-C=100pF, R=15K)
      
4
 
KV
dv/dt(`)
Peak Diode Recovery voltage slope
3
V/ns
VISO Insulation Winthstand Voltage (DC) -- 2000 V
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
(`)Pulse width limited by safe operating area           (1)ISD 9.4A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed

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