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STU10NC70ZI

Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate...

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STU10NC70ZI: Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that...

STU10NC70ZI Data Sheet

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Part Number:
STU10NC70ZI
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.




Application

·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT




Pinout

Symbol
 Parameter                      Value          Unit
    STU10NC70Z STU10NC70ZI
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain- gate Voltage (RGS = 20 k)
700
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current (continuous) at Tc = 25
904 9.4(*)
A
ID

Drain Current (continuous) at Tc = 100
5.9 5.9(*)
A
IDM(1)
Drain Current (pulsed)
37.6
 37.6(*)
A
PTOT
Total Dissipation at Tc = 25
160
 55
W
                                 
Derating Factor
       
1.28
        0.44  
W/
IGS
                         
Gate-source Current
      
±50
  
mA
VESD(G-S)
           
Gate source ESD(HBM-C=100pF, R=15K)
       
4
  
KV
dv/dt(`)
Peak Diode Recovery voltage slope
3
V/ns
VISO Insulation Winthstand Voltage (DC) -- 2000 V
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
(`)Pulse width limited by safe operating area           (1)ISD 9.4A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowed


Description

The third generation of MESH OVERLAY™ Power MOSFETs STU10NC70ZI for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.




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