STU100N3LF3

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 80 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.0068 Ohms


Features:

Type	VDSSS	RDS(on)	ID	Pw
STD100N3LF3	30 V	<0.0055	80 A(1)	110 W
STU100N3LF3	30 V	<0.0055	80 A(1)	110 W

1. Current limited by package
100% avalanche tested
Logic level threshold

 

Application

Switching application


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source voltage (VGS = 0)	30	V
ID (1)	Drain current (continuous) at TC = 25	80	A
ID	Drain current (continuous) at TC = 100	70	A
IDM (2)	Drain current (pulsed)	320	A
PTOT	Total dissipation at TC = 25	110	W
	Derating factor	0.73	W/
dv/dt (3)	Peak diode recovery voltage slope	3.9	V/ns
Tstg TJ	Storage temperature Max. operating junction temperature	-55 to 175

1. Current limited by package.
2. Pulse width limited by safe operating area
3. I_SD 80A, di/dt 360 A/s, V_DS V_(BR)DSS, T_J T_JMAX

Description

This Power MOSFET STU100N3LF3 is the latest refinement of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor STU100N3LF3 shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive application and DC-DC converters.