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STU26NM60I

Features: · TYPICAL RDS(on) = 0.125W· HIGH dv/dt AND AVALANCHE CAPABILITIES· IMPROVED ESD CAPABILITY· LOW INPUT CAPACITANCE AND GATE CHARGE· LOW GATE INPUT RESISTANCEApplicationThe MDmesh] family is very suitable for increasing power density of high voltage converters allowing system miniaturizati...

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SeekIC No. : 004508893 Detail

STU26NM60I: Features: · TYPICAL RDS(on) = 0.125W· HIGH dv/dt AND AVALANCHE CAPABILITIES· IMPROVED ESD CAPABILITY· LOW INPUT CAPACITANCE AND GATE CHARGE· LOW GATE INPUT RESISTANCEApplicationThe MDmesh] family is...

STU26NM60I Data Sheet

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Part Number:
STU26NM60I
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· TYPICAL RDS(on) = 0.125W
· HIGH dv/dt AND AVALANCHE CAPABILITIES
· IMPROVED ESD CAPABILITY
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE


Application

The MDmesh] family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.




Specifications

Symbol
Item
Ratings
Unit
STW26NM60 STU26NM60 STU26NM60I
VDS
 Drain-source Voltage (VGS = 0)
600
V
VDGR
 Drain-gate Voltage (RGS = 20 kW)
600
V
VGS
 Gate- source Voltage
± 30
 V
Id
 Drain Current (continuos) at TC = 25°C
30
26
26(*)
A
Id
 Drain Current (continuos) at TC = 100°C
18.9
16.38
16.38(*)
A
IDM(1)
 Drain Current (pulsed)
120
104
104(*)
A
PTOT
 Total Dissipation at TC = 25°C
313
192
73
W
 Derating Factor
2.5
1.54
0.58
W/
PESD(G-S)
 Gate source ESD(HBM-C=100pF, R=1.5K)
6000
V
dv/dt (1)
 Peak Diode Recovery voltage slope
15
V/ns
TJ
TSTG
 Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150




Description

The STU26NM60I is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH] horizontal layout. The resulting product STU26NM60I has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




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