Features: · Super high dense cell design for low RDS(ON).· Rugged and reliable.· TO-252 and TO-251 P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous@ TJ=125 -Pulseda ...
STU20N03L: Features: · Super high dense cell design for low RDS(ON).· Rugged and reliable.· TO-252 and TO-251 P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS ...
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Parameter |
Symbol |
Limit |
Unit |
Drain-S ource Voltage |
VDS |
30 |
V |
Gate-S ource Voltage |
VGS |
±20 |
V |
Drain Current-Continuous@ TJ=125 |
ID |
25 |
A |
IDM |
70 |
A | |
Drain-S ource Diode Forward Current |
Is |
20 |
A |
Maximum Power Dissipation @ Tc=25 |
PD |
50 |
W |
Operating and Storage Temperature Range | TJ,TSTG |
-55 to 175 |
|
THERMAL CHARACTERISTICS | |||
Thermal Resistance, Junction-to-Case |
RJC |
3 |
/W |
Thermal Resistance, Junction-to-Ambient |
RJA |
50 |
/W |