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STU20N03L

Features: · Super high dense cell design for low RDS(ON).· Rugged and reliable.· TO-252 and TO-251 P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 30 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuous@ TJ=125 -Pulseda ...

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SeekIC No. : 004508889 Detail

STU20N03L: Features: · Super high dense cell design for low RDS(ON).· Rugged and reliable.· TO-252 and TO-251 P ackage.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS ...

STU20N03L Data Sheet

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Part Number:
STU20N03L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Super high dense cell design for low RDS(ON).
· Rugged and reliable.
· TO-252 and TO-251 P ackage.


Specifications

Parameter
Symbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
±20
V

Drain Current-Continuous@ TJ=125
             -Pulseda
ID
25
A
IDM
70
A
Drain-S ource Diode Forward Current
Is
20
A
Maximum Power Dissipation @ Tc=25
PD
50
W
Operating and Storage Temperature Range TJ,TSTG
-55 to 175
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case

RJC
3
 /W
Thermal Resistance, Junction-to-Ambient
RJA
50
 /W



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