Features: ·TO-252 and TO-251 P ackage.·S uper high dense cell design for low R DS (ON).·R ugged and reliable.Specifications Parameter Symbol Maximum Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous @ Ta 25 ID 16 A 70 10.7 A ...
STU/D600S: Features: ·TO-252 and TO-251 P ackage.·S uper high dense cell design for low R DS (ON).·R ugged and reliable.Specifications Parameter Symbol Maximum Units Drain-Source Voltage VDS 60 V...
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Parameter | Symbol | Maximum | Units | |
Drain-Source Voltage | VDS | 60 | V | |
Gate-Source Voltage | VGS | ±20 | V | |
Drain Current-Continuous @ Ta | 25 | ID | 16 | A |
70 | 10.7 | A | ||
-Pulsed b | IDM | 30 | A | |
Power Dissipation a | Ta=25 | PD | 50 | W |
Ta=70 | 35 | W | ||
Drain-S ource Diode Forward Current a | IS | 15 | A | |
Junction and Storage Temperature Range | TJ, TSTG | -55 to 175 |