Features: ·TO-252 and TO-251 Package.·Super high dense cell design for low RDS(ON).·Rugged and reliable.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 40 V Gate-S ource Voltage VGS ±20 V Drain Current-Continuousa @ Ta 25 ID 50 A -Pulsed b IDM 1...
STU/D432S: Features: ·TO-252 and TO-251 Package.·Super high dense cell design for low RDS(ON).·Rugged and reliable.Specifications Parameter Symbol Limit Unit Drain-S ource Voltage VDS 40 V Gat...
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Parameter | Symbol | Limit | Unit | |
Drain-S ource Voltage | VDS | 40 | V | |
Gate-S ource Voltage | VGS | ±20 | V | |
Drain Current-Continuousa @ Ta | 25 | ID | 50 | A |
-Pulsed b | IDM | 100 | A | |
Drain-S ource Diode Forward Currenta | IS | 20 | A | |
Avalanche Current c | IAS | 23 | A | |
Avalanche Energy c | EAS | 130 | mJ | |
Maximum Power Dissipationa | Ta= 25 | PD | 50 | W |
Operating Junction and S torage Temperature R ange |
TJ , TSTG | -55 to 175 |