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STU10NA50, STU10NB80, STU10NC70Z

Table of contents:
Info of STU10NA50
Info of STU10NB80
Info of STU10NC70Z

STU10NA50, STU10NB80, STU10NC70Z Selling Leads, Datasheet

MFG:ST Package Cooled:09+ D/C:06+

STU10NA50, STU10NB80, STU10NC70Z Picture

STU10NA50, STU10NB80, STU10NC70Z Datasheet download

Five Points

Part Number: STU10NA50

MFG: ST

Package Cooled: 09+

D/C: 06+

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STU10NC70Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

STU10NC70Z Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STU10NC70Z Typical Application

·SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·WELDING EQUIPMENT

STU10NC70Z Connection Diagram

Symbol	Parameter	Value		Unit
		STU10NC70Z	STU10NC70ZI	Unit
V_DS	Drain-source Voltage (V_GS = 0)	700		V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	700		V
V_GS	Gate-Source Voltage	±25		V
I_D	Drain Current (continuous) at T_c = 25	904	9.4(*)	A
I_D	Drain Current (continuous) at T_c = 100	5.9	5.9(*)	A
I_DM(1)	Drain Current (pulsed)	37.6	37.6(*)	A
P_TOT	Total Dissipation at T_c = 25	160	55	W
	Derating Factor	1.28	0.44	W/
I_GS	Gate-source Current	±50		mA
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=15K)	4		KV
dv/dt(`)	Peak Diode Recovery voltage slope	3		V/ns
V_ISO	Insulation Winthstand Voltage (DC)	--	2000	V
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

(`)Pulse width limited by safe operating area (1)I_SD 9.4A, di/dt 100A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*)Limited only by maximum temperature allowed

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