Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB100NF03L-03-1 Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 16
V
ID(1)
Drain Current (continuous) at Tc = 25
100
A
ID(1)
Drain Current (continuous) at Tc = 100
100
A
IDM(`)
Drain Current (pulsed)
400
A
PTOT
Total Dissipation at Tc = 25
300
W
Derating Factor
2
W/
EAS (2)
Single Pulse Avalanche Energy
1.9
J
Tstg
Storage Temperature
-55 to 150
Tj
Operating Junction Temperature
-55 to 175
(•)Pulse width limited by safe operating area (1) Current Limited by Package (2) Starting Tj = 25 , ID = 50A, VDD = 50V
STB100NF03L-03-1 Typical Application
HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS