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STB100NH02LT4, STB10NA40, STB10NB20

Table of contents:
Info of STB100NH02LT4
Info of STB10NA40
Info of STB10NB20

STB100NH02LT4, STB10NA40, STB10NB20 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO263 D/C:06+07+pb-free

STB100NH02LT4, STB10NA40, STB10NB20 Datasheet download

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Part Number: STB100NH02LT4

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO263

D/C: 06+07+pb-free

Description: MOSFET N-CH 24V 60A D2PAK

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STB100NH02LT4 Parameters

Technical/Catalog Information	STB100NH02LT4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	24V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	2850pF @ 15V
Power - Max	100W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	64nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB100NH02LT4 STB100NH02LT4

STB100NH02LT4 General Description

The STB100NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.

STB100NH02LT4 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source voltage (VGS = 0)	24	V
V_DGR	Drain-gate voltage (RGS = 20 k)	24
V_GS	Gate-source voltage	± 20	V
I_D⁽¹⁾	Drain current (continuous) at TC = 25°C	60	A
I_D⁽¹⁾	Drain current (continuous) at TC = 100°C	60	A
I_DM⁽²⁾	Drain current (pulsed)	240	A
P_TOT⁽³⁾	Total dissipation at TC = 25°C	100	W
	Derating factor	0.67	W/°C
dv/dt	Peak diode recovery voltage slope	600	V/ns
E_AS	Single pulse avalanche energy	-55 to 175	mJ
T_j T_stg	Operating junction temperature Storage temperature	-55 to 175	°C

STB100NH02LT4 Features

` RDS(ON) * Qg industry's benchmark
` Conduction losses reduced
` Switching losses reduced
` Low threshold device

STB100NH02LT4 Typical Application

Switching application

STB10NB20 General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STB10NB20 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS = 0)	200	V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	200	V
V_GS	Gate- source Voltage	±30	V
I_D	Drain Current (continuos) at T_C = 25	10	A
I_D	Drain Current (continuos) at T_C = 100	6	A
I_DM()	Drain Current (pulsed)	40	A
P_tot	Total Dissipation at T_C = 25	85	W
	Derating Factor	0.68	W/
dv/dt (1)	Peak Diode Recovery voltage slope	5.2	V/ns
T_stg	Storage Temperature	65 to 175
T_j	Max. Operating Junction Temperature	150

() Pulse width limited by safe operating area
(1) I_SD 10A, di/dt300A/s, V_DDV_(BR)DSS, T_j T_JMAX.

STB10NB20 Features

` TYPICAL R_DS(on) = 0.30
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED
` FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STB10NB20 Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWER SUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE

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