STB10NB20T4, STB10NB50, STB10NB50T4 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-263 D/C:08+
STB10NB20T4, STB10NB50, STB10NB50T4 Datasheet download
Part Number: STB10NB20T4
MFG: ST
Package Cooled: TO-263
D/C: 08+
MFG:ST Package Cooled:TO-263 D/C:08+
STB10NB20T4, STB10NB50, STB10NB50T4 Datasheet download
MFG: ST
Package Cooled: TO-263
D/C: 08+
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Datasheet: STB10NB20T4
File Size: 87274 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: STB10NB50
File Size: 88736 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STB10NB50T4
File Size: 281381 KB
Manufacturer:
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Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol | Parameter |
Value |
Unit |
VDS | Drain-source Voltage (VGS = 0) |
500 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
800 |
V |
VGS | Gate- source Voltage |
±30 |
V |
ID | Drain Current (continuos) at TC = 25 |
10.6 |
A |
ID | Drain Current (continuos) at TC = 100 |
64 |
A |
IDM() | Drain Current (pulsed) |
42.4 |
A |
Ptot | Total Dissipation at TC = 25 |
135 |
W |
Derating Factor |
1.08 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tstg | Storage Temperature |
65 to 150 |
|
Tj | Max. Operating Junction Temperature |
150 |