STB1002T4, STB100NF03L, STB100NF03L-03 Selling Leads, Datasheet
MFG:mot Package Cooled:mot D/C:dc94
STB1002T4, STB100NF03L, STB100NF03L-03 Datasheet download
Part Number: STB1002T4
MFG: mot
Package Cooled: mot
D/C: dc94
MFG:mot Package Cooled:mot D/C:dc94
STB1002T4, STB100NF03L, STB100NF03L-03 Datasheet download
MFG: mot
Package Cooled: mot
D/C: dc94
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PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB100NF03L-03
File Size: 293779 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB100NF03L-03
File Size: 293779 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
VGS |
Gate-Source Voltage |
± 16 |
V |
ID(1) |
Drain Current (continuous) at Tc = 25 |
100 |
A |
ID(1) |
Drain Current (continuous) at Tc = 100 |
100 |
A |
IDM(`) |
Drain Current (pulsed) |
400 |
A |
PTOT |
Total Dissipation at Tc = 25 |
300 |
W |
Derating Factor |
2 |
W/
| |
EAS (2) | Single Pulse Avalanche Energy |
1.9 |
J |
Tstg |
Storage Temperature |
-55 to 150 |
|
Tj |
Operating Junction Temperature |
-55 to 175 |