STB100NF04, STB100NF04-1, STB100NF04L Selling Leads, Datasheet
MFG:ST Package Cooled:. D/C:TO
STB100NF04, STB100NF04-1, STB100NF04L Datasheet download
Part Number: STB100NF04
MFG: ST
Package Cooled: .
D/C: TO
STB100NF04, STB100NF04-1, STB100NF04L
- Table of contents:
Info of STB100NF04
Info of STB100NF04-1
Info of STB100NF04L
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About STB100NF04
PDF/DataSheet Download
Datasheet: STB100NF04
File Size: 598905 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STB100NF04-1
PDF/DataSheet Download
Datasheet: STB100NF04-1
File Size: 598905 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STB100NF04L
PDF/DataSheet Download
Datasheet: STB100NF04L
File Size: 253715 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STB100NF04 General Description
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB100NF04 Maximum Ratings
| Symbol | Parameter |
Value |
Unit | |
| VDS | Drain-source Voltage (VGS = 0) |
40 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
40 |
V | |
| VGS | Gate- source Voltage |
± 20 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
120 |
A | |
| ID(#) | Drain Current (continuos) at TC = 100 |
120 |
A | |
| IDM(`) | Drain Current (pulsed) |
480 |
A | |
| PTOT | Total Dissipation at TC = 25 |
300 |
W | |
| Derating Factor |
2 |
W/ | ||
| dv/dt (1) | Peak Diode Recovery voltage slope |
6 |
V/ns | |
| EAS(2) | Single Pulse Avalanche Energy |
1.2 |
J | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 |
| |
(1) ISD 120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package
STB100NF04 Features
` TYPICAL RDS(on) = 0.0043
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED
STB100NF04 Typical Application
· HIGH CURRENT, HIGH SWITCHING SPEED
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· SOLENOID AND RELAY DRIVERS
STB100NF04-1 General Description
This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB100NF04-1 Maximum Ratings
| Symbol | Parameter |
Value |
Unit | |
| VDS | Drain-source Voltage (VGS = 0) |
40 |
V | |
| VDGR | Drain-gate Voltage (RGS = 20 k) |
40 |
V | |
| VGS | Gate- source Voltage |
± 20 |
V | |
| ID | Drain Current (continuos) at TC = 25 |
120 |
A | |
| ID(#) | Drain Current (continuos) at TC = 100 |
120 |
A | |
| IDM(`) | Drain Current (pulsed) |
480 |
A | |
| PTOT | Total Dissipation at TC = 25 |
300 |
W | |
| Derating Factor |
2 |
W/ | ||
| dv/dt (1) | Peak Diode Recovery voltage slope |
6 |
V/ns | |
| EAS(2) | Single Pulse Avalanche Energy |
1.2 |
J | |
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 175 |
| |
(1) ISD 120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package
STB100NF04-1 Features
` TYPICAL RDS(on) = 0.0043
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED
` STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED
STB100NF04-1 Typical Application
· HIGH CURRENT, HIGH SWITCHING SPEED
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS
· SOLENOID AND RELAY DRIVERS
STB100NF04L General Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STB100NF04L Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VDS VDGR VGS ID(*) ID IDM(•) Ptot dv/dt (1) EAS (2) Tstg Tj |
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature |
40 40 ± 16 100 70 400 300 2 3.6 1.4 -65 to 175 175 |
V V V A A A W W/°C V/ns J °C °C |
STB100NF04L Features
·TYPICAL RDS(on) = 0.0036 W
·LOW THRESHOLD DRIVE
·100% AVALANCHE TESTED
·LOGIC LEVEL DEVICE
·LOW THRESHOLD DRIVE
·100% AVALANCHE TESTED
·LOGIC LEVEL DEVICE
STB100NF04L Typical Application
·HIGH CURRENT, HIGH SWITCHING SPEED
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC & DC-AC CONVERTERS
·SOLENOID AND RELAY DRIVERS
·MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC & DC-AC CONVERTERS
·SOLENOID AND RELAY DRIVERS
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