STB10NC50, STB10NC50-1, STB10NC50T4 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-263 D/C:00(og stok))
STB10NC50, STB10NC50-1, STB10NC50T4 Datasheet download
Part Number: STB10NC50
MFG: ST
Package Cooled: TO-263
D/C: 00(og stok))
MFG:ST Package Cooled:TO-263 D/C:00(og stok))
STB10NC50, STB10NC50-1, STB10NC50T4 Datasheet download
MFG: ST
Package Cooled: TO-263
D/C: 00(og stok))
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PDF/DataSheet Download
Datasheet: STB10NC50
File Size: 120913 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB10NC50-1
File Size: 59170 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STB010XX
File Size: 409899 KB
Manufacturer: IBM
Download : Click here to Download
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
500 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 k) |
500 |
V |
VGS |
Gate- source Voltage |
± 30 |
V |
ID |
Drain Current (continuos) at TC = 25 |
10 |
A |
ID |
Drain Current (continuos) at TC = 100 |
6.3 |
A |
IDM (`) |
Drain Current (pulsed) |
40 |
A |
Ptot |
Total Dissipation at TC = 25 |
135 |
W |
Derating Factor |
1.08 |
W/ | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
3 |
V/ns |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |