Position: Home  > All Categories> Integrated Circuits (ICs) > STB100NF04-1

STB100NF04-1

Features: ` TYPICAL RDS(on) = 0.0043 ` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS· SOLENOID AND RELAY DRIVERSSpecifications Symbol Parameter Value Unit VDS Drain-sourc...

product image

STB100NF04-1 Picture
See larger image
SeekIC No. : 004507058 Detail

STB100NF04-1: Features: ` TYPICAL RDS(on) = 0.0043 ` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS· ...

STB100NF04-1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STB100NF04-1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.0043
`  STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED


Application

 · HIGH CURRENT, HIGH SWITCHING SPEED
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-DC & DC-AC CONVERTERS
 · SOLENOID AND RELAY DRIVERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
40
V
VDGR Drain-gate Voltage (RGS = 20 k)
40
V
VGS Gate- source Voltage
± 20
V
ID Drain Current (continuos) at TC = 25
120
A
ID(#) Drain Current (continuos) at TC = 100
120
A
IDM(`) Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
300
W
Derating Factor
2
W/
dv/dt (1) Peak Diode Recovery voltage slope
6
V/ns
EAS(2) Single Pulse Avalanche Energy
1.2
J
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 175

(`) Pulse width limited by safe operating area
(1) ISD 120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package


Description

This STB100NF04-1 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Prototyping Products
AVT4168
DE1
Resistors
A101G
3006P-1-205LF
Optical Inspection Equipment
AA924
A21K4B
LED Products
LM24P20
KCG057QV1DB-G770
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more