Position: Home > DataSheet > Index S > SPU Series > SPU02N60S5, SPU03N60C3, SPU03N60S5

Low Cost Custom Prototype PCB Manufacturer

SPU02N60S5, SPU03N60C3, SPU03N60S5

Table of contents:
Info of SPU02N60S5
Info of SPU03N60C3
Info of SPU03N60S5

SPU02N60S5, SPU03N60C3, SPU03N60S5 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:54000 D/C:A40

SPU02N60S5, SPU03N60C3, SPU03N60S5 Datasheet download

Five Points

Part Number: SPU02N60S5

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 54000

D/C: A40

Description: MOSFET N-CH 600V 3.2A TO-251

Price Break

1
10
100
1000

Unit Price

1.16000
1.00700
.77450
.46470

Extended Price

1.16
10.07
77.45
464.70

(All prices are in USD) Prices for reference only

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

SPU02N60S5 Parameters

Technical/Catalog Information	SPU02N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	3 Ohm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	240pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	9.5nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU02N60S5 SPU02N60S5 SPU02N60S5IN ND SPU02N60S5INND SPU02N60S5IN

SPU02N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	1.8 1.1	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	3.2	A
Avalanche energy, single pulse I_D=1.35A, V_DD=50V	E_AS	50	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=1.8A, V_DD=50V	E_AR	0.07	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	1.8	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	25	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 1.8 A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPU02N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPU03N60C3 Parameters

Technical/Catalog Information	SPU03N60C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	17nC @ 10V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU03N60C3 SPU03N60C3

SPU03N60C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	3.2	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	9.6	A
Avalanche energy, single pulse I_D=2.4A, V_DD=50V	E_AS	100	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=3.2A, V_DD=50V	E_AR	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	3.2	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	38	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 3.2A, T_j = 125 °C	dv/dt	50	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPU03N60C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance

SPU03N60S5 Parameters

Technical/Catalog Information	SPU03N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	420pF @ 25V
Power - Max	38W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16nC @ 10V
Package / Case	IPak, TO-251, DPak (3 straight short leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU03N60S5 SPU03N60S5 SPU03N60S5IN ND SPU03N60S5INND SPU03N60S5IN

SPU03N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	3.2 2	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	5.7	A
Avalanche energy, single pulse I_D=2.4A, V_DD=50V	E_AS	100	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=3.2A, V_DD=50V	E_AR	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	3.2	A
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	38	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 3.2A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPU03N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components