MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO-251 D/C:TO
SPU07N60C2, SPU07N60C3, SPU07N60S5 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO-251
D/C: TO
Description: MOSFET N-CH 600V 7.3A TO-251
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PDF/DataSheet Download
Datasheet: SPU07N60C2
File Size: 142955 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPU07N60C3
File Size: 294564 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPU07N60S5
File Size: 269128 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 14.6 | |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.3A, VDD=50V |
EAR | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.3 | A |
| Reverse diode dv/dt IS=7.3A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | V/ns |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation, TC = 25°C | Ptot | 83 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity
| Technical/Catalog Information | SPU07N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 790pF @ 25V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPU07N60C3 SPU07N60C3 SPU07N60C3IN ND SPU07N60C3INND SPU07N60C3IN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 21.9 | |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.3A, VDD=50V |
EAR | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.3 | A |
| Reverse diode dv/dt IS=7.3A, VDS=480V, Tj=125°C |
dv/dt | 6 | V/ns |
| Gate source voltage static | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 25 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C |
dv/dt | 50 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
| Technical/Catalog Information | SPU07N60S5 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 970pF @ 25V |
| Power - Max | 83W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPU07N60S5 SPU07N60S5 SPU07N60S5IN ND SPU07N60S5INND SPU07N60S5IN |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 14.6 | |
| Avalanche energy, single pulse ID=-A, VDD=50V |
EAS | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.3A, VDD=50V |
EAR | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.3 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 83 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 480 V, ID =7.3A, Tj = 125 °C |
dv/dt | 20 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
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