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SPU09N05, SPU09P06PL, SPU10N10

Table of contents:
Info of SPU09N05
Info of SPU09P06PL
Info of SPU10N10

SPU09N05, SPU09P06PL, SPU10N10 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:9800 D/C:TO

SPU09N05, SPU09P06PL, SPU10N10 Datasheet download

Five Points

Part Number: SPU09P06PL

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: 9800

D/C: TO

Description: MOSFET P-CH 60V 9.7A TO-251

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SPU09P06PL Parameters

Technical/Catalog Information	SPU09P06PL
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	9.7A
Rds On (Max) @ Id, Vgs	250 mOhm @ 6.8A, 10V
Input Capacitance (Ciss) @ Vds	450pF @ 25V
Power - Max	42W
Packaging	Tube
Gate Charge (Qg) @ Vgs	21nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPU09P06PL SPU09P06PL SPU09P06PLIN ND SPU09P06PLINND SPU09P06PLIN

SPU09P06PL Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	-9.7 -6.8	A
Pulsed drain current T_C = 25 °C	I_D _puls	-38.8	A
Avalanche energy, single pulse I_D =-9.7A, V_DD = -25 V, R_GS = 25	E_AS	70	mJ
Repetitive avalanche energy, limited by T_jmax	E_AR	4.2	mJ
Reverse diode dv/dt I_S =-9.7 A, V_DS =-25V, di/dt = 200 A/s,T_jmax=175°C	dv/dt	6	kV/s
Gate source voltage	V_GS	±20	V
Power dissipation T_C = 25 °C	P_tot	42	W
Operating and storage temperature	T_j, T_stg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

SPU09P06PL Features

· P-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated

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