MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:TO251-3 D/C:08+/09+
SPU11N10, SPU12-4R2, SPU12-4R2-4A Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: TO251-3
D/C: 08+/09+
Description: MOSFET N-CH 100V 10.5A IPAK
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PDF/DataSheet Download
Datasheet: SPU11N10
File Size: 505036 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPU01N50M2
File Size: 90266 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPU01N50M2
File Size: 90266 KB
Manufacturer: Siemens Semiconductor Group
Download : Click here to Download
| Technical/Catalog Information | SPU11N10 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 10.5A |
| Rds On (Max) @ Id, Vgs | 170 mOhm @ 7.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 400pF @ 25V |
| Power - Max | 50W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 18.3nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPU11N10 SPU11N10 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C TC=100°C |
ID | 10.5 7.8 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 41.2 | |
| Avalanche energy, single pulse ID =10.5A, VDD = 25 V, RGS = 25 |
EAS | 60 | mJ |
| Reverse diode dv/dt IS =10.5 A, VDS =80 , di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 50 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
· N-Channel
· Enhancement mode
·175°C operating temperature
· Avalanche rated
· dv/dt rated
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