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SPU04N60C2

Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Improved noise immunitySpecifications Parameter Symbol Value Unit Continuous drain currentTC...

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SPU04N60C2: Features: • New revolutionary high voltage technology• Ultra low gate charge• Periodic avalanche rated• Extreme dv/dt rated• Ultra low effective capacitances• Imp...

SPU04N60C2 Data Sheet

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SPU04N60C2
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5000

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Upload time: 2024/11/26

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Product Details

Description



Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved noise immunity


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 4.5
2.8		 A
Pulsed drain current, tp limited by Tjmax ID puls 9
Avalanche energy, single pulse
ID=3.6A, VDD=50V		 EAS 130 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=4.5A, VDD=50V		 EAR 0.4
Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 A
Reverse diode dv/dt
IS=4.5A, VDS < VDD, di/dt=100A/s, Tjmax=150°C		 dv/dt 6 V/ns
Gate source voltage VGS ±20 V
Power dissipation, TC = 25°C Ptot 50 W
Operating and storage temperature Tj , Tstg -55...+150 °C

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




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