Position: Home  > All Categories> Integrated Circuits (ICs) > SPU01N60C3

SPU01N60C3

MOSFET COOL MOS N-CH 650V 0.8A

product image

SPU01N60C3 Picture
See larger image
SeekIC No. : 00145932 Detail

SPU01N60C3: MOSFET COOL MOS N-CH 650V 0.8A

SPU01N60C3 Data Sheet

floor Price/Ceiling Price

US $ .3~.56 / Piece | Get Latest Price
Part Number:
SPU01N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.56
  • $.45
  • $.39
  • $.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.8 A
Resistance Drain-Source RDS (on) : 6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-251
Continuous Drain Current : 0.8 A
Resistance Drain-Source RDS (on) : 6 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 0.8
0.5		 A
Pulsed drain current, tp limited by Tjmax ID puls 1.6
Avalanche energy, single pulse
ID=0.6A, VDD=50V		 EAS 20 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=0.8A, VDD=50V		 EAR 0.01
Avalanche current, repetitive tAR limited by Tjmax IAR 0.8 A
Gate source voltage static VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 11 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 0.8 A, Tj = 125 °C		 dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPU01N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C800mA
Rds On (Max) @ Id, Vgs6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 100pF @ 25V
Power - Max11W
PackagingTube
Gate Charge (Qg) @ Vgs5nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU01N60C3
SPU01N60C3
SPU01N60C3IN ND
SPU01N60C3INND
SPU01N60C3IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Discrete Semiconductor Products
T508N12TOF
MUR20040
Integrated Circuits (ICs)
TA8435H
1MB12-140
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Kits
IT243
UVSC-110-4E1
View more