SPU01N50M2

Parameter

Symbol

Value

Unit

Continuous drain current
T_C = 25 °C
T_C = 100 °C

I_D

0.8
0.5

A

Pulsed drain current, tp = 1ms 1)
T_C = 25 °C

I_D puls

1.6

A

Avalanche energy, single pulse
I_D = 0.8 A, V_DD = 50 V, R_GS = 25 W
Periodic avalanche energy EAR only limited by Tjmax

E_AS

tbd

mJ

Reverse diode dv/dt
I_S = 0.8 A, V_DS<V_DSS, di/dt = 100 A/s,
Tjmax = 150 °C

dv/dt

6

kV/s

Gate source voltage

V_GS

±20

V

Power dissipation
T_C = 25 °C

P_tot

11

W

Operating and storage temperature

T_j , T_stg

-55 ...+150

°C