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SPU04N60C3

MOSFET COOL MOS N-CH 650V 4.5A

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SeekIC No. : 00150059 Detail

SPU04N60C3: MOSFET COOL MOS N-CH 650V 4.5A

SPU04N60C3 Data Sheet

floor Price/Ceiling Price

US $ .36~.38 / Piece | Get Latest Price
Part Number:
SPU04N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.38
  • $.38
  • $.37
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.95 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PG-TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 0.95 Ohms
Package / Case : PG-TO-251


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 4.5
2.8		 A
Pulsed drain current, tp limited by Tjmax ID puls 13.5
Avalanche energy, single pulse
ID=3.4A, VDD=50V		 EAS 130 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=4.5A, VDD=50V		 EAR 0.4
Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 50 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 4.5 A, Tj = 125 °C		 dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPU04N60C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C4.5A
Rds On (Max) @ Id, Vgs950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds 490pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPU04N60C3
SPU04N60C3
SPU04N60C3IN ND
SPU04N60C3INND
SPU04N60C3IN



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