MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+
SPD08N50C3, SPD08P05, SPD08P06 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: .
D/C: 06+
Description: MOSFET N-CH 560V 7.6A DPAK
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PDF/DataSheet Download
Datasheet: SPD08N50C3
File Size: 262921 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD08P05
File Size: 224717 KB
Manufacturer: Infineon
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD08P06P
File Size: 116684 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPD08N50C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 7.6A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 750pF @ 25V |
| Power - Max | 83W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 32nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD08N50C3 SPD08N50C3 SPD08N50C3INTR ND SPD08N50C3INTRND SPD08N50C3INTR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.6 4.6 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 22.8 | |
| Avalanche energy, single pulse ID=5.5A, VDD=50V |
EAS | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.6A, VDD=50V |
EAR | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.6 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 83 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 400 V, ID = 7.6A, Tj = 125 °C |
dv/dt | 50 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
| Parameter | Symbol | Values | Unit |
| Continuous drain current TC = 30 °C |
ID | -8 | A |
| Pulsed drain current TC = 25 °C |
IDpuls | -32 | |
| Avalanche energy, single pulse ID = -8 A, VDD = -25 V, RGS = 25 W L = 2.2 mH, Tj = 25 °C |
EAS | 70 | mJ |
| Gate source voltage | VGS | ± 20 | V |
| Power dissipation TC = 25 °C |
Ptot | 40 | W |
| Operating temperature | Tj | -55 ... + 150 | °C |
| Storage temperature | Tstg | -55 ... + 150 | |
| Thermal resistance, junction - case | RthJC | 3.1 | K/W |
| Thermal resistance, junction - ambient (PCB mount)** | RthJA | 50 | |
| Thermal resistance, junction - ambient | RthJA | 100 | |
| IEC climatic category, DIN IEC 68-1 | 55 / 150 / 56 |
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