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SPD03N60S5, SPD04N50C3, SPD04N60

Table of contents:
Info of SPD03N60S5
Info of SPD04N50C3
Info of SPD04N60

SPD03N60S5, SPD04N50C3, SPD04N60 Selling Leads, Datasheet

MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:P-TO252-3-1 D/C:07+

SPD03N60S5, SPD04N50C3, SPD04N60 Datasheet download

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Part Number: SPD03N60S5

Category: Discrete Semiconductor Products

MFG: Infineon Technologies (VA)

Package Cooled: P-TO252-3-1

D/C: 07+

Description: MOSFET N-CH 560V 4.5A DPAK

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SPD03N60S5 Parameters

Technical/Catalog Information	SPD03N60S5
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	3.2A
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	420pF @ 25V
Power - Max	38W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD03N60S5 SPD03N60S5 SPD03N60S5INTR ND SPD03N60S5INTRND SPD03N60S5INTR

SPD03N60S5 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	3.2 2	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	5.7	A
Avalanche energy, single pulse I_D=2.4A, V_DD=50V	E_AS	100	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=3.2A, V_DD=50V	E_AR	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	3.2	A
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	38	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 3.2A, T_j = 125 °C	dv/dt	20	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPD03N60S5 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPD04N50C3 Parameters

Technical/Catalog Information	SPD04N50C3
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	560V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	950 mOhm @ 2.8A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 25V
Power - Max	50W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	22nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD04N50C3 SPD04N50C3 SPD04N50C3INCT ND SPD04N50C3INCTND SPD04N50C3INCT

SPD04N50C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4.5 2.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	13.5	A
Avalanche energy, single pulse I_D=3.4A, V_DD=50V	E_AS	130	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=4.5A, V_DD=50V	E_AR	0.4	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4.5	A
Gate source voltage	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	50	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 400 V, I_D = 4.5 A, T_j = 125 °C	dv/dt	tbd	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPD04N50C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

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