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SPD04N80C3, SPD06N60C3, SPD06N80C3

Table of contents:
Info of SPD04N80C3
Info of SPD06N60C3
Info of SPD06N80C3

SPD04N80C3, SPD06N60C3, SPD06N80C3 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO252 D/C:08+

SPD04N80C3, SPD06N60C3, SPD06N80C3 Datasheet download

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Part Number: SPD04N80C3

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: P-TO252

D/C: 08+

Description: MOSFET N-CH 800V 6A DPAK

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SPD04N80C3 Parameters

Technical/Catalog Information	SPD04N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 25V
Power - Max	63W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD04N80C3 SPD04N80C3 SPD04N80C3INTR ND SPD04N80C3INTRND SPD04N80C3INTR

SPD04N80C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	4 2.5	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	12	A
Avalanche energy, single pulse I_D=0.8A, V_DD=50V	E_AS	170	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=4A, V_DD=50V	E_AR	0.1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	4	A
Gate source voltage	V_GS	±20	V
Power dissipation, T_C = 25°C	P_tot	63	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS =640V, I_D = 4 A, T_j = 125 °C	dv/dt	50	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPD04N80C3 Features

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance

SPD06N60C3 Parameters

Technical/Catalog Information	SPD06N60C3
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	6.2A
Rds On (Max) @ Id, Vgs	750 mOhm @ 3.9A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 25V
Power - Max	74W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	31nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD06N60C3 SPD06N60C3 SPD06N60C3INDKR ND SPD06N60C3INDKRND SPD06N60C3INDKR

SPD06N80C3 Parameters

Technical/Catalog Information	SPD06N80C3
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	900 mOhm @ 3.8A, 10V
Input Capacitance (Ciss) @ Vds	785pF @ 100V
Power - Max	83W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	41nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SPD06N80C3 SPD06N80C3 SPD06N80C3INTR ND SPD06N80C3INTRND SPD06N80C3INTR

SPD06N80C3 Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C= 100 °C	I_D	6 3.8	A
Pulsed drain current, t_p limited by T_jmax	I_D _puls	18	A
Avalanche energy, single pulse I_D=1.2A, V_DD=50V	E_AS	230	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D=6A, V_DD=50V	E_AR	0.2	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	6	A
Gate source voltage	V_GS	±20	V
Power dissipation, T_C = 25°C	P_tot	83	W
Operating and storage temperature	T_j, T_stg	-55...+150	°C
Drain Source voltage slope V_DS = 640 V, I_D =6 A, T_j = 125 °C	dv/dt	50	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as P_AV=E_AR*f.

SPD06N80C3 Features

• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated

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