MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:3
SPD06N03, SPD06N80, SPD07N20 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: SOT-252
D/C: 3
Description: MOSFET N-CH 200V 7A TO-252
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Datasheet: SPD005G
File Size: 52325 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: SPD06N80C3
File Size: 260907 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD07N20
File Size: 122982 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPD07N20 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 7A |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
| Power - Max | 40W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 31.5nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD07N20 SPD07N20 SPD07N20INDKR ND SPD07N20INDKRND SPD07N20INDKR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7 4.5 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 28 | |
| Avalanche energy, single pulse ID =7A, VDD = 50 V, RGS = 25 |
EAS | 120 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 4 | |
| Reverse diode dv/dt IS =7 A, VDS =160V, di/dt = 200 A/s, Tjmax = 175 °C |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 40 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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