MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:P-TO252 D/C:08+
SPD07N60S5, SPD08N05L, SPD08N10 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: P-TO252
D/C: 08+
Description: MOSFET N-CH 600V 7.3A DPAK
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PDF/DataSheet Download
Datasheet: SPD07N60S5
File Size: 269128 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD08N05L
File Size: 147266 KB
Manufacturer: Infineon
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD08N10
File Size: 124832 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | SPD07N60S5 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 7.3A |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 4.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 970pF @ 25V |
| Power - Max | 83W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPD07N60S5 SPD07N60S5 SPD07N60S5INTR ND SPD07N60S5INTRND SPD07N60S5INTR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 7.3 4.6 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 14.6 | |
| Avalanche energy, single pulse ID=-A, VDD=50V |
EAS | 230 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.3A, VDD=50V |
EAR | 0.5 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 7.3 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 83 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 480 V, ID =7.3A, Tj = 125 °C |
dv/dt | 20 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
| Parameter |
Symbol |
Values |
Unit |
| Continuous drain current TC = 25 TC = 100 |
ID | 8.4 5.9 |
A |
| Pulsed drain current TC = 25 | IDpuls | 34 | |
| Avalanche energy, single pulse ID = 8.4 A, VDD = 25 V, RGS = 25 W L = 992 H, Tj = 25 |
EAS | 35 | mJ |
| Avalanche current,limited by Tjmax | IAR | 8.4 | A |
| Avalanche energy,periodic limited by Tjmax | EAR | 2.4 | mJ |
| Reverse diode dv/dt IS = 8.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ± 14 | V |
| Power dissipation TC = 25 | Ptot | 24 | W |
| Operating temperature | Tj | -55 ... + 175 | |
| Storage temperature | Tstg | -55 ... + 175 | |
| Thermal resistance, junction - case | RthJC | £ 6.25 | K/W |
| Thermal resistance, junction - ambient (PCB mount)** | RthJA | £ 50 | |
| Thermal resistance, junction - ambient | RthJA | £ 100 | |
| IEC climatic category, DIN IEC 68-1 | 55 / 175 / 56 |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 8.4 5.4 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 33.6 | |
| Avalanche energy, single pulse ID =8.4A, VDD = 25 V, RGS = 25 |
EAS | 30 | mJ |
| Repetitive avalanche energy, limited by Tjmax | EAR | 4 | |
| Reverse diode dv/dt IS =8.4 A, VDS =80V, di/dt = 200 A/s, |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 40 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
· N channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
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