MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:TO
SPD04N60C2, SPD04N60C3, SPD04N60S5 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: .
D/C: TO
Description: MOSFET N-CH 600V 4.5A TO-252
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PDF/DataSheet Download
Datasheet: SPD04N60C2
File Size: 147284 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD04N60C3
File Size: 294097 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD04N60S5
File Size: 274700 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 9 | |
| Avalanche energy, single pulse ID=3.6A, VDD=50V |
EAS | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=4.5A, VDD=50V |
EAR | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | A |
| Reverse diode dv/dt IS=4.5A, VDS < VDD, di/dt=100A/s, Tjmax=150°C |
dv/dt | 6 | V/ns |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation, TC = 25°C | Ptot | 50 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
| Technical/Catalog Information | SPD04N60C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 490pF @ 25V |
| Power - Max | 50W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPD04N60C3 SPD04N60C3 SPD04N60C3INTR ND SPD04N60C3INTRND SPD04N60C3INTR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 13.5 | |
| Avalanche energy, single pulse ID=3.4A, VDD=50V |
EAS | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=4.5A, VDD=50V |
EAR | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 480 V, ID = 4.5 A, Tj = 125 °C |
dv/dt | 50 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
| Technical/Catalog Information | SPD04N60S5 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 4.5A |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 580pF @ 25V |
| Power - Max | 50W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 22.9nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD04N60S5 SPD04N60S5 SPD04N60S5INDKR ND SPD04N60S5INDKRND SPD04N60S5INDKR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 4.5 2.8 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 9 | |
| Avalanche energy, single pulse ID=3.4A, VDD=50V |
EAS | 130 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=4.5A, VDD=50V |
EAR | 0.4 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 4.5 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 50 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 480 V, ID = 4.5A, Tj = 125 °C |
dv/dt | 20 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
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