MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOT-252 D/C:2006
SPD01N60S5, SPD02N50C3, SPD02N60 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: SOT-252
D/C: 2006
Description: MOSFET N-CH 560V 1.8A DPAK
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PDF/DataSheet Download
Datasheet: SPD005G
File Size: 52325 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD02N50C3
File Size: 273986 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SPD02N60
File Size: 88548 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | SPD02N50C3 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25° C | 1.8A |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 1.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 190pF @ 25V |
| Power - Max | 25W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 9nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD02N50C3 SPD02N50C3 SPD02N50C3INTR ND SPD02N50C3INTRND SPD02N50C3INTR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 1.8 1.1 |
A |
| Pulsed drain current, tp limited by Tjmax | ID puls | 5.4 | |
| Avalanche energy, single pulse ID=1.35A, VDD=50V |
EAS | 50 | mJ |
| Avalanche energy, repetitive tAR limited by Tjmax1) ID=1.8A, VDD=50V |
EAR | 0.07 | |
| Avalanche current, repetitive tAR limited by Tjmax | IAR | 1.8 | A |
| Gate source voltage | VGS | ±20 | V |
| Gate source voltage AC (f >1Hz) | VGS | ±30 | |
| Power dissipation, TC = 25°C | Ptot | 35 | W |
| Operating and storage temperature | Tj , Tstg | -55...+150 | °C |
| Drain Source voltage slope VDS = 400 V, ID = 1.8 A, Tj = 125 °C |
dv/dt | 50 | V/ns |
1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
| Parameter | Symbol | Value | Unit |
| Continuous drain current1) TC = 25 °C TC = 100 °C |
ID | 2 1.3 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 8 | |
|
Avalanche energy, single pulse |
EAS | 135 | mJ |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 55 | W |
| Operating temperature | Tj | -55... +175 | °C |
| Storage temperature | Tstg | -55... +175 | |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
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