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SHF-0289, SHF0589, SHF-0589

Table of contents:
Info of SHF-0289
Info of SHF0589
Info of SHF-0589

SHF-0289, SHF0589, SHF-0589 Selling Leads, Datasheet

MFG:SIRENZA Package Cooled:new and original D/C:08+/09+

SHF-0289, SHF0589, SHF-0589 Datasheet download

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Part Number: SHF-0289

MFG: SIRENZA

Package Cooled: new and original

D/C: 08+/09+

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SHF-0289 General Description

Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.

Adequate heat sinking must be provided for this part to avoid exceeding the maximum junction temperature. Methods include the use of screws near the device, and filled vias beneath the part to the ground plane. Refer to"Mounting and Thermal Considerations" section on page 7 for more information.

SHF-0289 Maximum Ratings

Parameter	Symbol	Value	Unit
Drain to Source Voltage	V_DS	+12	V
Gate to Source Voltage	V_GS	-5 to 0	V
RF Input Power	P_IN	200	mW
Operating Temperature	T_OP	-45 to +85
Channel Temperature	T_CH	+175
Storage Temperature	T_STG	-65 to +175

1. Operation of this device above any one of these parameters may cause permanent damage.

SHF-0289 Features

· Patented GaAs Heterostructure FET Technology
· +30dBm Output Power at 1dB Compression
· +46dBm Output IP3
· High Drain Efficiency: Up to 40% at Class AB
· 13 dB Gain at 900MHz (Application circuit)
· 13 dB Gain at 1900MHz (Application circuit)

SHF-0289 Typical Application

· Analog and Digital Wireless System
· Cellular PCS, CDPD, Wireless Data, Pagers

SHF-0589 General Description

Sirenza Microdevices' SHF-0589 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improvesbreakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Output power at 1dB compression is +33.4 dBm when biased for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5 dBm third order intercept makes it ideal for high dynamic range,high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.

SHF-0589 Maximum Ratings

Parameter	Symbol	Value	Unit
Drain Current	I_DS	640	mA
Forward Gate Current	I_GSF	4.8	mA
Reverse Gate Current	I_GSR	4.8	mA
Drain-to-Source Voltage	V_DS	9.0	V
Gate-to-Source Voltage	V_GS	<-5 or>0	V
RF Input Power	P_IN	800	mW
Operating Lead Temperature	T_L	See Graph	°C
Storage Temperature Range	T_stg	-40 to +125	°C
Power Dissipation	P_D	See Graph	W
Channel Temperature	T_J	165	°C

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page 1.

SHF-0589 Features

• High Linearity Performance at 1.96 GHz
+33.4 dBm P1dB
+46.5 dBm OIP3
+26 dBm IS-95 Channel Power
+11.5 dB Gain
• +23.7 dBm W-CDMA Channel Power
• High Drain Efficiency (>50% at P1dB)

SHF-0589 Typical Application

• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems

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