Features: • Patented AlGaAs/GaAs Heterostructure FET Technology• +28 dBm P1dB Typical• +40 dBm Output IP3 Typical• High Drain Efficiency: Up to 46% at Class AB• 17 dB Gain at 900 MHz (Application circuit)• 15 dB Gain at 1900 MHz (Application circuit)• Gmax...
SHF-0186: Features: • Patented AlGaAs/GaAs Heterostructure FET Technology• +28 dBm P1dB Typical• +40 dBm Output IP3 Typical• High Drain Efficiency: Up to 46% at Class AB• 17 dB G...
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Parameter |
Symbol |
Value |
Unit |
Drain to Source Voltage |
VDS |
+12 |
V |
Gate to Source Voltage |
VGS |
-5 to 0 |
V |
RF Input Power |
PIN |
200 |
mW |
Operating Temperature |
TOP |
-45 to +85 |
|
Storage Temperature |
Tstg |
-65 to +175 |
|
Operating Junction Temperature |
TJ |
+175 |
Stanford Microdevices' SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes SHF-0186 ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.