SHF-0189

IC HFET ALGAAS/GAAS .5W SOT-89

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SHF-0189 Picture
SeekIC No. : 003434858 Detail

SHF-0189: IC HFET ALGAAS/GAAS .5W SOT-89

floor Price/Ceiling Price

Part Number:
SHF-0189
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: RFMD
Transistor Type: HFET Frequency: 1.96GHz
Package / Case : TSLP Gain: 20.1dB
Voltage - Test: 8V Current Rating: 200mA
Noise Figure: 3.2dB Current - Test: 100mA
Power - Output: 27.5dBm Voltage - Rated: 9V
Package / Case: TO-243AA Supplier Device Package: SOT-89    

Description

Series: -
Packaging: Digi-Reel®
Transistor Type: HFET
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Current - Test: 100mA
Voltage - Test: 8V
Frequency: 1.96GHz
Manufacturer: RFMD
Gain: 20.1dB
Current Rating: 200mA
Noise Figure: 3.2dB
Power - Output: 27.5dBm
Voltage - Rated: 9V


Features:

• Now available in Lead Free, RoHS Compliant, & Green Packaging
• High Linearity Performance at 1.96 GHz
+27 dBm P1dB
+40 dBm Output IP3
+16.5 dB Gain
• High Drain Efficiency
• See App Note AN-031 for circuit details



Application

• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems



Specifications

Parameter
Symbol
Value
Unit
Drain Current
IDS
200
mA
Forward Gate Current
IGSF
1.2
mA
Reverse Gate Current
IGSR
1.2
mA
Drain-to-Source Voltage
VDS
+9.0
V
Gate-to-Source Voltage
VGS
<-5 or >0
V
RF Input Power
PIN
200
mW
Operating Lead Temperature
TL
See Graph
°C
Storage Temperature Range
Tstor
-40 to +150
°C
Power Dissipation
PDISS
See Graph
W
Channel Temperature
TJ
+165
°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page 1.



Description

Sirenza Microdevices' SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.

The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package of SHF-0189 is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.




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