SHF-0189-H1, SHF0189Z, SHF-0189Z Selling Leads, Datasheet
MFG:sirenza Package Cooled:SOT-89 D/C:08+
SHF-0189-H1, SHF0189Z, SHF-0189Z Datasheet download
Part Number: SHF-0189-H1
MFG: sirenza
Package Cooled: SOT-89
D/C: 08+
SHF-0189-H1, SHF0189Z, SHF-0189Z
- Table of contents:
Info of SHF-0189-H1
Info of SHF0189Z
Info of SHF-0189Z
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About SHF-0186
PDF/DataSheet Download
Datasheet: SHF-0186
File Size: 163220 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SHF-0186
PDF/DataSheet Download
Datasheet: SHF-0186
File Size: 163220 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SHF-0189Z
PDF/DataSheet Download
Datasheet: SHF-0189Z
File Size: 105668 KB
Manufacturer: ETC
Download : Click here to Download
SHF-0189Z General Description
Sirenza Microdevices' SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Class AB operation at 8V,100mA. The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.
The matte tin finish on Sirenza's lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants.
SHF-0189Z Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Drain Current |
IDS |
200 |
mA |
| Forward Gate Current |
IGSF |
1.2 |
mA |
| Reverse Gate Current |
IGSR |
1.2 |
mA |
| Drain-to-Source Voltage |
VDS |
+9.0 |
V |
| Gate-to-Source Voltage |
VGS |
<-5 or >0 |
V |
| RF Input Power |
PIN |
200 |
mW |
| Operating Lead Temperature |
TL |
See Graph |
°C |
| Storage Temperature Range |
Tstor |
-40 to +150 |
°C |
| Power Dissipation |
PDISS |
See Graph |
W |
| Channel Temperature |
TJ |
+165 |
°C |
| Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page 1. | |||
SHF-0189Z Features
• Now available in Lead Free, RoHS Compliant, & Green Packaging
• High Linearity Performance at 1.96 GHz
+27 dBm P1dB
+40 dBm Output IP3
+16.5 dB Gain
• High Drain Efficiency
• See App Note AN-031 for circuit details
• High Linearity Performance at 1.96 GHz
+27 dBm P1dB
+40 dBm Output IP3
+16.5 dB Gain
• High Drain Efficiency
• See App Note AN-031 for circuit details
SHF-0189Z Typical Application
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems
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