Features: • High Linearity Performance at 1.96 GHz+33.4 dBm P1dB+46.5 dBm OIP3+26 dBm IS-95 Channel Power+11.5 dB Gain• +23.7 dBm W-CDMA Channel Power• High Drain Efficiency (>50% at P1dB)Application• Analog and Digital Wireless Systems• 3G, Cellular, PCS• Fi...
SHF-0589: Features: • High Linearity Performance at 1.96 GHz+33.4 dBm P1dB+46.5 dBm OIP3+26 dBm IS-95 Channel Power+11.5 dB Gain• +23.7 dBm W-CDMA Channel Power• High Drain Efficiency (>5...
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Parameter |
Symbol |
Value |
Unit |
Drain Current |
IDS |
640 |
mA |
Forward Gate Current |
IGSF |
4.8 |
mA |
Reverse Gate Current |
IGSR |
4.8 |
mA |
Drain-to-Source Voltage |
VDS |
9.0 |
V |
Gate-to-Source Voltage |
VGS |
<-5 or>0 |
V |
RF Input Power |
PIN |
800 |
mW |
Operating Lead Temperature |
TL |
See Graph |
°C |
Storage Temperature Range |
Tstg |
-40 to +125 |
°C |
Power Dissipation |
PD |
See Graph |
W |
Channel Temperature |
TJ |
165 |
°C |
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page 1.
Sirenza Microdevices' SHF-0589 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improvesbreakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression is +33.4 dBm when biased for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5 dBm third order intercept makes it ideal for high dynamic range,high intercept point requirements. SHF-0589 is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.