SHF-0289

Series: -
Packaging: Cut Tape (CT)
Transistor Type: HFET
Gain: 20dB
Current - Test: 200mA
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Noise Figure: 4dB
Frequency: 1.96GHz
Manufacturer: RFMD
Voltage - Rated: 9V
Voltage - Test: 7V
Current Rating: 400mA
Power - Output: 30.2dBm


Features:

· Patented GaAs Heterostructure FET   Technology
· +30dBm Output Power at 1dB Compression
· +46dBm Output IP3
· High Drain Efficiency:  Up to 40% at Class AB
· 13 dB Gain at 900MHz (Application circuit)
· 13 dB Gain at 1900MHz (Application circuit)


Application

· Analog and Digital Wireless System
· Cellular PCS, CDPD, Wireless Data, Pagers


Specifications

Parameter	Symbol	Value	Unit
Drain to Source Voltage	VDS	+12	V
Gate to Source Voltage	VGS	-5 to 0	V
RF Input Power	PIN	200	mW
Operating Temperature	TOP	-45 to +85
Channel Temperature	TCH	+175
Storage Temperature	TSTG	-65 to +175

1. Operation of this device above any one of these parameters may cause permanent damage.


Description

Stanford Microdevices' SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.

Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 8V and 250mA. The +46 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. They are well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.

Adequate heat sinking must be provided for this part to avoid exceeding the maximum junction temperature. Methods include the use of screws near SHF-0289, and filled vias beneath the part to the ground plane. Refer to"Mounting and Thermal Considerations" section on page 7 for more information.