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SHF-0198

Features: • Patented AIGaAs/GaAs Heterostructure FET Technology• +27dBm Output Power at 1dB Compression• +38 dBm Output IP3• High Power Added Efficiency - up to 40% at Class A• 17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHzApplication• AMPS, PCS Basestations• VSA...

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SHF-0198: Features: • Patented AIGaAs/GaAs Heterostructure FET Technology• +27dBm Output Power at 1dB Compression• +38 dBm Output IP3• High Power Added Efficiency - up to 40% at Class ...

SHF-0198 Data Sheet

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Part Number:
SHF-0198
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Patented AIGaAs/GaAs Heterostructure FET Technology
• +27dBm Output Power at 1dB Compression
• +38 dBm Output IP3
• High Power Added Efficiency - up to 40% at Class A
• 17dB Gain @ 900 MHz, 14dB Gain @ 1.9GHz


Application

• AMPS, PCS Basestations
• VSAT


Specifications

Parameter
Symbol
Absolute Maximum
Drain to Source Voltage
VDS
+10V
Gate to Source Voltage
VGS
-5V
Drain Current
IDS
IDSS
RF Input Power
PIN
100mW
Channel Temperature
TCH
175
Storage Temperature
TSTG
-65 to +175
Thermal Resistance,Junction-Ground Lead
RIN
36 deg/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Mounting Surface Temperature = 25° C


Description

Stanford Microdevices' SHF-0198 series is a high performance AlGaAs/GaAs Heterostructure FET housed in a low-cost stripline-mount ceramic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power-added efficiency and improved linearity.

Output power at 1dB compression for the SHF-0198 is +27dBm when biased for Class A operation at 9V and 150mA. This HFET is also characterized at 5V for lower voltage applications.

SHF-0198  can be used in both analog and digital wireless communication infrastructure and subscriber equipment including cellular, PCS, CDPD, wireless data and pagers.




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