SHEGN, SHEGO, SHF-0186 Selling Leads, Datasheet
MFG:Sirenza Package Cooled:SOT5 D/C:2007+
SHEGN, SHEGO, SHF-0186 Datasheet download
Part Number: SHEGN
MFG: Sirenza
Package Cooled: SOT5
D/C: 2007+
SHEGN, SHEGO, SHF-0186
- Table of contents:
Info of SHEGN
Info of SHEGO
Info of SHF-0186
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About SHE113MD
PDF/DataSheet Download
Datasheet: SHE113MD
File Size: 276379 KB
Manufacturer: AUK [AUK corp]
Download : Click here to Download
About SHE113MD
PDF/DataSheet Download
Datasheet: SHE113MD
File Size: 276379 KB
Manufacturer: AUK [AUK corp]
Download : Click here to Download
About SHF-0186
PDF/DataSheet Download
Datasheet: SHF-0186
File Size: 163220 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
SHF-0186 General Description
Stanford Microdevices' SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity.
Output power at 1dB compression for the SHF-0186 is +28 dBm when biased for Class AB operation at 8V and 100mA.
The +40 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including cellular PCS, CDPD, wireless data, and pagers.
SHF-0186 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
| Drain to Source Voltage |
VDS |
+12 |
V |
| Gate to Source Voltage |
VGS |
-5 to 0 |
V |
| RF Input Power |
PIN |
200 |
mW |
| Operating Temperature |
TOP |
-45 to +85 |
|
| Storage Temperature |
Tstg |
-65 to +175 |
|
| Operating Junction Temperature |
TJ |
+175 |
Bias Conditions should also satisfy the following expression: IDSVDS (max) < (TJ - TL)/RTH
SHF-0186 Features
• Patented AlGaAs/GaAs Heterostructure FET Technology
• +28 dBm P1dB Typical
• +40 dBm Output IP3 Typical
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)
• Gmax Guaranteed at 12 GHz
• +28 dBm P1dB Typical
• +40 dBm Output IP3 Typical
• High Drain Efficiency: Up to 46% at Class AB
• 17 dB Gain at 900 MHz (Application circuit)
• 15 dB Gain at 1900 MHz (Application circuit)
• Gmax Guaranteed at 12 GHz
SHF-0186 Typical Application
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits
• Cellular PCS, CDPD, Wireless Data, Pagers
• AN-020 Contains detailed application circuits
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