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NTB60N06T4G, NTB65N02R, NTB65N02RG

NTB60N06T4G, NTB65N02R, NTB65N02RG Selling Leads, Datasheet

MFG:ON Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:.  D/C:07+

NTB60N06T4G, NTB65N02R, NTB65N02RG Picture

NTB60N06T4G, NTB65N02R, NTB65N02RG Datasheet download

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Part Number: NTB60N06T4G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: .

D/C: 07+

Description: MOSFET PWR N-CHAN 60V 60A D2PAK

 

 
 
 
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About NTB60N06T4G

PDF/DataSheet Download

Datasheet: NTB60N06T4G

File Size: 87727 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NTB65N02R

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Datasheet: NTB65N02R

File Size: 48152 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NTB10N40

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Datasheet: NTB10N40

File Size: 72740 KB

Manufacturer: ON SEMICONDUCTOR

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NTB60N06T4G Parameters

Technical/Catalog InformationNTB60N06T4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 3220pF @ 25V
Power - Max2.4W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs81nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTB60N06T4G
NTB60N06T4G
NTB60N06T4GOSCT ND
NTB60N06T4GOSCTND
NTB60N06T4GOSCT

NTB65N02R Maximum Ratings

Rating Symbol Value Unit
DraintoSource Voltage VDSS 24 Vdc
GatetoSource Voltage Continuous VGS ±20 Vdc
Drain Current (Continuous @ TA = 25°C (Note 3)
Single Pulse (tp = 10 s)
ID
IDM
65
160
A
A
Total Power Dissipation @ TA = 25°C PD 78 W
Operating and Storage Temperature TJ and
Tstg
55 to
150
°C
Single Pulse Drainto Source Avalanche
Energy Starting TJ=25°C
(VDD = 50 Vdc, VGS = 5 Vdc, IL = Apk, L = 1 mH,
RG = 25 )
EAS TBD mJ
Thermal Resistance JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RJC
RJA
RJA
1.6
67
120
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8" from Case for 10 Seconds
TL 260 °C

NTB65N02R Features

• Planar HD3e Process for Fast Switching Performance
• Low RDSon to Minimize Conduction Loss
• Low Ciss to Minimize Driver Loss
• Low Gate Charge
• Fast Switching

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